ME 682: Advanced Nanofabrication for Nanoelectronics

Catalog Description: This course will address the basic concepts of nanoelectronics, including fundamental principles, novel electronic materials, novel fabrication techniques and devices. In particular, it will focus on novel nanofabrication techniques including nanolithography, growth and assembly processes, and characterization techniques to validate its fabrication process related to the area of Nanoelectronics. It will also address the technical issues to develop nano-scale elements/devices including single electron devices, carbon nanotubes as interconnects or transistors, nanowires, graphene materials and devices, spintronic applications and eventually complex organic molecules as memory and logic units.

Goals: The course is to introduce students to the area of Nanoelectronics, concentrating on its nanofabrication techniques such as nanolithography, growth and assembly of nanostructures.

Outcomes: Students will be able to a) design and analyze basic nanoelectronics devices such as single electron transistors and b) understand the nanofabrication techniques associated with the nanoelectronics devices such as single electron devices, carbon nanotube electronics, next generation memory and storage devices and sensor arrays.

Prerequisites: ME 573 or Permission of instructor

Cross-listing: NANO — show cross-listed course number(s)

Percentages for: HW 20% , Projects 50%, Case Study 30%

Course’s Objective: The course is intended to provide an introduction to novel nanofabrication techniques and nanoscale device technologies for Nanoelectronic applications. In addition to understanding the nanofabrication processes, the design aspect of nanoscale devices will also be addressed. The student will leave the course with a general understanding of the current state-of-the-art nanofabrication techniques for nanoelectronics devices as well as basic skills for continuation into advanced design and fabrication.

Textbook(s) or References: Nanoelectronics and Information Technology (ISBN-13: 978-3-527-40542-8, ISBN-10: 3-527-40542-9), WILEY-VCH, 2005: In addition, we will use a combination of selections from references books, journal publications and on-line information.

Syllabus:

	Topic(s)	Homework: Reading(s)	Presentation and Term-projects	Description
Week 1	Introduction			§ Course Introduction § Nanoelectronics, definition and impact
Week 2	Background on solid state electronics	Chapter I	Case study assignment	§ Fermi surface and band structures § Field-effect transistors, charge control model
Week 3	Fabrication of nanoscale building blocks	Chapter II		§ E-beam, AFM, STM, dip-pen, nanoimprint, self-assembly
Week 4	Characterization of nanoscale building blocks	Chapter II	Term-Project assignment	§ Materials and device characterization,
Week 5	Single electron devices I	Chapter III	Case study presentation	§ Coulomb blockade § Fabrication issues for logic and memory applications
Week 6	Single electron devices II	Chapter III	Case study presentation	§ Device examples
Week 7	Project Review		Term-project proposal	§ Review
Week 8	Graphene and carbon nanotubes I	Chapter III	Case study presentation	§ Material structures and properties § Electric and mechanical properties
Week 9	Graphene and carbon nanotubes II	Chapter III	Case study presentation	§ FET, inverter, oscillator, optics, emitters, chemical sensors § NEMS
Week 10	Semiconductor nanowires I	Reference	Case study presentation	§ Growth § Heterostructures
Week 11	Semiconductor nanowires II	Reference	Case study presentation	§ Assembly, biosensors, environmental sensors, solar cells, lasers
Week 12	Molecular electronics	Chapter III	Case study presentation	§ Single molecule devices § Memory devices
Week 13	Spintronics	Chapter IV		§ Spin-FET, spin valves and MRAM
Week 14	Term project		Poster Presentations	§ Term-Project Poster and Oral Presentations

Prof. E. H. Yang, Stevens Institute of Technology

스티븐스 공대, 양의혁 교수

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